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| SMD General Purpose Transistor (NPN) MMBT2222A SMD General Purpose Transistor (NPN) Features * NPN Silicon Epitaxial Planar Transistor for Switching and Amplifier Applications * RoHS compliance Mechanical Data Case: Terminals: Weight: SOT-23, Plastic Package Solderable per MIL-STD-202G, Method 208 0.008 gram SOT-23 Maximum Ratings (T Ambient=25C unless noted otherwise) Symbol Marking Code Description MMBT2222A 1P 75 40 6.0 0.6 350 Power Dissipation above 25C (note 1) 2.8 mW/ C C /W C C V V V A mW Unit VCBO VCEO VEBO IC Ptot RJA TJ TSTG Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Thermal Resistance, Junction to Ambient Junction Temperature Storage Temperature Range 357 150 -55 to +150 Note: (1) Device mounted on FR-4 PCB 1.6'' x 1.6'' x 0.06'' TAITRON COMPONENTS INCORPORATED www.taitroncomponents.com Tel: (800)-TAITRON Fax: (800)-TAITFA (800)-824-8766 (800)-824-8329 (661)-257-6060 (661)-257-6415 Rev. A/AH 2007-11-13 Page 1 of 3 SMD General Purpose Transistor (NPN) MMBT2222A Electrical Characteristics (T Ambient=25C unless noted otherwise) Symbol Description Min. 35 50 75 Max. 300 0.3 1.0 1.2 2.0 10 10 V V V V Unit Conditions VCE=10V, IC=0.1mA VCE=10V, IC=1mA VCE=10V, IC=10mA VCE=10V, IC=10mA Ta=-55 C VCE=10V, IC=150mA* VCE=10V, IC=500mA* VCE=1.0V, IC=150mA* IC=10A, IE=0 IC=10mA, IB=0 IE=10A, IC=0 IC=150mA, IB=15mA IC=500mA, IB=50mA IC=150mA, IB=15mA IC=500mA, IB=50mA VEB=3V, VCE=60V VCB=60V, IE=0 VCB=60V, IE=0, Ta=125 C VEB=3V, VCE=60V VEB=3V, IC=0 VCE=20V, IC=20mA, f=100MHz VCB=10V, f=1.0MHz, IE=0 VEB=0.5V, f=1.0MHz, IC=0 VCE=10V, IC=100A, Rs=1k, f=1kHz VCB=20V, IC=20mA, f=31.8 MHz IB1=15mA IC=150mA VCC=30V VEB=0.5V IB1=IB2=15mA IC=150mA VCC=30V hFE D.C. Current Gain 35 100 40 50 V(BR)CBO V(BR)CEO V(BR)EBO VCEsat VBEsat ICEX ICBO IBL IEBO fT Cobo Cibo NF Collector-Base Breakdown Voltage Collector-Emitter Breakdown Voltage* Emitter-Base Breakdown Voltage Collector-Emitter Saturation Voltage* 75 40 6.0 0.6 300 - Base-Emitter Saturation Voltage* Collector Cut-off Current Collector Cut-off Current Base Cut-off Current Emitter Cut-off Current Current Gain-Bandwidth Product Output Capacitance Input Capacitance Noise Figure Collector Base Time Constant Delay Time Rise Time Storage Time Fall Time V nA nA A nA nA MHz pF pF dB ps 10 20 10 8.0 25 4.0 150 10 25 225 60 rb'Cc td tr ts tf ns *Pulse Test Pulse Width 300s, Duty Cycle 2.0% Rev. A/AH 2007-11-13 www.taitroncomponents.com Page 2 of 3 SMD General Purpose Transistor (NPN) MMBT2222A Dimensions in mm SOT-23 How to contact us: US HEADQUARTERS 28040 WEST HARRISON PARKWAY, VALENCIA, CA 91355-4162 Tel: (800) TAITRON (800) 824-8766 (661) 257-6060 Fax: (800) TAITFAX (800) 824-8329 (661) 257-6415 Email: taitron@taitroncomponents.com Http://www.taitroncomponents.com TAITRON COMPONENTS MEXICO, S.A .DE C.V. BOULEVARD CENTRAL 5000 INTERIOR 5 PARQUE INDUSTRIAL ATITALAQUIA, HIDALGO C.P. 42970 MEXICO Tel: +52-55-5560-1519 Fax: +52-55-5560-2190 TAITRON COMPONENTS INCORPORATED REPRESENTACOES DO BRASIL LTDA RUA DOMINGOS DE MORAIS, 2777, 2.ANDAR, SALA 24 SAUDE - SAO PAULO-SP 04035-001 BRAZIL Tel: +55-11-5574-7949 Fax: +55-11-5572-0052 TAITRON COMPONENTS INCORPORATED, SHANGHAI REPRESENTATIVE OFFICE METROBANK PLAZA, 1160 WEST YAN' AN ROAD, SUITE 1503, SHANGHAI, 200052, CHINA Tel: +86-21-5424-9942 Fax: +86-21-5424-9931 Rev. A/AH 2007-11-13 www.taitroncomponents.com Page 3 of 3 |
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